Rise in Demand for Semi-Conductor and Electronic Devices Expected to Drive Global High-k and ALD/CVD Metal Precursors Market: Ken Research

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High-k is a material having a high dielectric constant and threshold for the comparison being the dielectric constant of the silicon dioxide, it has been also been for decades and is a de-facto material used for the gate dielectric layer of the device. The High-k dielectrics is commonly used in the process of semiconductor manufacturing, with a strategy well known to come over a use for allowing further reduction in size of the microelectronic components.

The Atomic layer deposition (ALD) and chemical vapor deposition (CVD) are thin films used for depositing techniques, with the ALD often being considered as a sub-set of CVD and the techniques depending on the sort of chemical reaction between substrate and material deposited. Further, these processes are often being used over the production of thin films in the semiconductor industry. The ALD method is widely used for depositing the multi-component thin films by co-injecting the precursors such as Hf and Si forming a single layer, homogenous film used for several applications

Global High K and ALD CVD metal precursors MarketAccording to study, “Global High-k and ALD/CVD metal precursors Market to reach USD 952.73 million by 2026” the key companies operating in the global High-k and ALD/CVD metal precursors market are Air Products and Chemicals, Inc., Adeka Corporation, Merck Group, SAFC Hitech (Sigma-Aldrich Corporation) (Acquired by Merck KGaA), Dynamic network Factory, UP Chemical Co. Ltd., DOWDUPONT, Nanmat Technology Co. Ltd., JSR Corporation, TANAKA KIKINZOKU, Praxair Inc.

Based on product type, High-k and ALD/CVD metal precursors market is segmented as capacitor/memory, interconnect, gates and others. The interconnect is a fabrication technique that widely uses Copper (Cu) or Aluminum (Al) for patterning the metals as well as designed to introduce the barrier metal layers in order to protect the Silicon (Si) from the potential damage over an Integrated Circuit (IC). In addition, based on application, market is segmented as semiconductor industry and non-semiconductors arenas.

The High-k and ALD/CVD metal precursors market is driven by increase in applications of high-k materials in LEDs, followed by rise in demand in nanotechnology applications and growth in demand for improved semiconductor devices. However, risks associated with higher impurity levels may impact the market. Moreover, extensive research & development (R&D) and government policies supporting semi-conductor industry are key opportunities for market.

Based on geography, the Asian-Pacific region holds major share in High-k and ALD/CVD metal precursors market owing to growth in electronic industry coupled with high application potential of semiconductors in smartphones and automotive industry in the region. Whereas, the North-American and European regions are estimated to witness higher growth rate due to early adoption of the technologies in countries such as Canada and the U.S. over the forecast period. In upcoming years, it is predicted that future of the global market as a result of continuous rise in demand for miniaturized semiconductor device during the forecast period. The global High-k and ALD/CVD metal precursors market is valued approximately US $528.99 million in 2018 and is expected to grow with a healthy growth rate of more than 7.83 % over the forecast period 2019 to 2026.

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Global High-k and ALD/CVD metal precursors Market

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